A platform for research: civil engineering, architecture and urbanism
Co-Formation of Gate Electrode and Ohmic Contacts in SiC Power MOSFETs
Co-Formation of Gate Electrode and Ohmic Contacts in SiC Power MOSFETs
Co-Formation of Gate Electrode and Ohmic Contacts in SiC Power MOSFETs
Song, G. H. (author) / Bahng, W. (author) / Kim, N. K. (author) / Kim, S. C. (author) / Seo, K. S. (author) / Kim, E. D. (author) / Bergman, P. / Janzen, E.
2003-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
British Library Online Contents | 2003
|Forming ohmic Ag/SnO2 contacts
British Library Online Contents | 2015
|Composite Ohmic Contacts to SiC
British Library Online Contents | 2006
|Ohmic contacts to Gallium Nitride materials
British Library Online Contents | 2016
|Ohmic contacts to Gallium Nitride materials
British Library Online Contents | 2016
|