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Single Material Ohmic Contacts Simultaneously Formed on the Source/P-Well/Gate of 4H-SiC Vertical MOSFETs
Single Material Ohmic Contacts Simultaneously Formed on the Source/P-Well/Gate of 4H-SiC Vertical MOSFETs
Single Material Ohmic Contacts Simultaneously Formed on the Source/P-Well/Gate of 4H-SiC Vertical MOSFETs
Kiritani, N. (author) / Hoshi, M. (author) / Tanimoto, S. (author) / Adachi, K. (author) / Nishizawa, S.-i. (author) / Yatsuo, T. (author) / Okushi, H. (author) / Arai, K. (author) / Bergman, P. / Janzen, E.
2003-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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