Characteristics of Ni Schottky Contacts on Compensated 4H-SiC Layers: Fid-Bau Portal

Characteristics of Ni Schottky Contacts on Compensated 4H-SiC Layers

Kasamakova-Kolaklieva, L. / Yakimova, R. / Kakanakov, R. / Kakanakova-Georgieva, A. / Syvajarvi, M. / Janzen, E.

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Characteristics of Ni Schottky Contacts on Compensated 4H-SiC Layers

Kasamakova-Kolaklieva, L. / Yakimova, R. / Kakanakov, R. / Kakanakova-Georgieva, A. / Syvajarvi, M. / Janzen, E.

Characteristics of Ni Schottky Contacts on Compensated 4H-SiC Layers

Kasamakova-Kolaklieva, L. / Yakimova, R. / Kakanakov, R. / Kakanakova-Georgieva, A. / Syvajarvi, M. / Janzen, E.

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Document information

Title:

Characteristics of Ni Schottky Contacts on Compensated 4H-SiC Layers

Contributors:

Kasamakova-Kolaklieva, L. (author) / Yakimova, R. (author) / Kakanakov, R. (author) / Kakanakova-Georgieva, A. (author) / Syvajarvi, M. (author) / Janzen, E. (author) / Bergman, P. / Janzen, E.

Published in:

Silicon Carbide and Related Materials 2002 ; 709-712

MATERIALS SCIENCE FORUM ; 433/436

Publication date:

2003-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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