Fabrication and Characterisation of High-Voltage SiC-Thyristors: Fid-Bau Portal

Fabrication and Characterisation of High-Voltage SiC-Thyristors

Zorngiebel, V. / Scharnholz, S. / Spahn, E. / Brosselard, P. / Arssi, N. / Chante, J.-P. / Planson, D. / Raynaud, C. / Spangenberg, B. / Kurz, H.

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Fabrication and Characterisation of High-Voltage SiC-Thyristors

Zorngiebel, V. / Scharnholz, S. / Spahn, E. / Brosselard, P. / Arssi, N. / Chante, J.-P. / Planson, D. / Raynaud, C. / Spangenberg, B. / Kurz, H.

Fabrication and Characterisation of High-Voltage SiC-Thyristors

Zorngiebel, V. / Scharnholz, S. / Spahn, E. / Brosselard, P. / Arssi, N. / Chante, J.-P. / Planson, D. / Raynaud, C. / Spangenberg, B. / Kurz, H.

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Document information

Title:

Fabrication and Characterisation of High-Voltage SiC-Thyristors

Contributors:

Zorngiebel, V. (author) / Scharnholz, S. (author) / Spahn, E. (author) / Brosselard, P. (author) / Arssi, N. (author) / Chante, J.-P. (author) / Planson, D. (author) / Raynaud, C. (author) / Spangenberg, B. (author) / Kurz, H. (author)

Published in:

Silicon Carbide and Related Materials 2002 ; 883-886

MATERIALS SCIENCE FORUM ; 433/436

Publication date:

2003-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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