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    Formation of interface silicides at room temperature in pulsed laser deposited Ti thin films on Si1 0 0

    New search for: Venkataraman, V.
    New search for: Rajagopalan, S.
    New search for: Manoravi, P.
    New search for: Balamurugan, A. K.
    New search for: Ramalingam, A.
    New search for: Tyagi, A. K.

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    Formation of interface silicides at room temperature in pulsed laser deposited Ti thin films on Si1 0 0

    New search for: Venkataraman, V.
    New search for: Rajagopalan, S.
    New search for: Manoravi, P.
    New search for: Balamurugan, A. K.
    New search for: Ramalingam, A.
    New search for: Tyagi, A. K.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Formation of interface silicides at room temperature in pulsed laser deposited Ti thin films on Si1 0 0

    New search for: Venkataraman, V.
    New search for: Rajagopalan, S.
    New search for: Manoravi, P.
    New search for: Balamurugan, A. K.
    New search for: Ramalingam, A.
    New search for: Tyagi, A. K.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

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    Document information
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    Document information
    Title:

    Formation of interface silicides at room temperature in pulsed laser deposited Ti thin films on Si1 0 0

    Contributors:

    Venkataraman, V. (author) / Rajagopalan, S. (author) / Manoravi, P. (author) / Balamurugan, A. K. (author) / Ramalingam, A. (author) / Tyagi, A. K. (author)

    Published in:

    MATERIALS RESEARCH BULLETIN ; 38 ; 1835-1840

    Publication date:

    2003-01-01

    Size:

    6 pages

    ISSN:

    0025-5408

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11 / 620

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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