Electronic stopping powers for fluorine ions in 19F+-implanted AgGaS2 crystal: Fid-Bau Portal

Electronic stopping powers for fluorine ions in 19F+-implanted AgGaS2 crystal

Liu, X. / Xia, Y. / Lu, Q. / Li, F. / Huang, B.

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Electronic stopping powers for fluorine ions in 19F+-implanted AgGaS2 crystal

Liu, X. / Xia, Y. / Lu, Q. / Li, F. / Huang, B.

Electronic stopping powers for fluorine ions in 19F+-implanted AgGaS2 crystal

Liu, X. / Xia, Y. / Lu, Q. / Li, F. / Huang, B.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Electronic stopping powers for fluorine ions in 19F+-implanted AgGaS2 crystal

Contributors:

Liu, X. (author) / Xia, Y. (author) / Lu, Q. (author) / Li, F. (author) / Huang, B. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 106 ; 105-110

Publication date:

2004-01-01

Size:

6 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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