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Characteristics of thin film transistors fabricated employing various sequential lateral solidification poly-Si microstructures
Characteristics of thin film transistors fabricated employing various sequential lateral solidification poly-Si microstructures
Characteristics of thin film transistors fabricated employing various sequential lateral solidification poly-Si microstructures
Park, J.-Y. (author) / Park, H.-H. (author) / Lee, K.-Y. (author) / Chung, H.-K. (author)
JOURNAL OF MATERIALS RESEARCH -PITTSBURGH THEN WARRENDALE- ; 19 ; 481-487
2004-01-01
7 pages
Article (Journal)
English
DDC:
620.11
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