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Kinetics of Si capping process of Ge/Si(0 0 1) quantum dots

Yam, V. / Le Thanh, V. / Debarre, D. / Zheng, Y. / Bouchier, D.

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Kinetics of Si capping process of Ge/Si(0 0 1) quantum dots

Yam, V. / Le Thanh, V. / Debarre, D. / Zheng, Y. / Bouchier, D.

Kinetics of Si capping process of Ge/Si(0 0 1) quantum dots

Yam, V. / Le Thanh, V. / Debarre, D. / Zheng, Y. / Bouchier, D.

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Check availability in my library

Order at Subito €

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Document information

Title:

Kinetics of Si capping process of Ge/Si(0 0 1) quantum dots

Contributors:

Yam, V. (author) / Le Thanh, V. (author) / Debarre, D. (author) / Zheng, Y. (author) / Bouchier, D. (author)

Published in:

APPLIED SURFACE SCIENCE ; 224 ; 143-147

Publication date:

2004-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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