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    The effect of C on emitter-base design for a single-polysilicon SiGe:C HBT with an IDP emitter

    New search for: Haralson, E.
    New search for: Suvar, E.
    New search for: Malm, G.
    New search for: Radamson, H.
    New search for: Wang, Y. B.
    New search for: Ostling, M.

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    The effect of C on emitter-base design for a single-polysilicon SiGe:C HBT with an IDP emitter

    New search for: Haralson, E.
    New search for: Suvar, E.
    New search for: Malm, G.
    New search for: Radamson, H.
    New search for: Wang, Y. B.
    New search for: Ostling, M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    The effect of C on emitter-base design for a single-polysilicon SiGe:C HBT with an IDP emitter

    New search for: Haralson, E.
    New search for: Suvar, E.
    New search for: Malm, G.
    New search for: Radamson, H.
    New search for: Wang, Y. B.
    New search for: Ostling, M.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
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    Document information
    Title:

    The effect of C on emitter-base design for a single-polysilicon SiGe:C HBT with an IDP emitter

    Contributors:

    Haralson, E. (author) / Suvar, E. (author) / Malm, G. (author) / Radamson, H. (author) / Wang, Y. B. (author) / Ostling, M. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 224 ; 330-335

    Publication date:

    2004-01-01

    Size:

    6 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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