Characterization of leakage current related to a selectively grown collector in SiGeC heterojunction bipolar transistor structure: Fid-Bau Portal

Characterization of leakage current related to a selectively grown collector in SiGeC heterojunction bipolar transistor structure

Suvar, E. / Haralson, E. / Radamson, H. H. / Wang, Y. B. / Grahn, J. V. / Malm, B. G. / Ostling, M.

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Characterization of leakage current related to a selectively grown collector in SiGeC heterojunction bipolar transistor structure

Suvar, E. / Haralson, E. / Radamson, H. H. / Wang, Y. B. / Grahn, J. V. / Malm, B. G. / Ostling, M.

Characterization of leakage current related to a selectively grown collector in SiGeC heterojunction bipolar transistor structure

Suvar, E. / Haralson, E. / Radamson, H. H. / Wang, Y. B. / Grahn, J. V. / Malm, B. G. / Ostling, M.

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Document information

Title:

Characterization of leakage current related to a selectively grown collector in SiGeC heterojunction bipolar transistor structure

Contributors:

Suvar, E. (author) / Haralson, E. (author) / Radamson, H. H. (author) / Wang, Y. B. (author) / Grahn, J. V. (author) / Malm, B. G. (author) / Ostling, M. (author)

Published in:

APPLIED SURFACE SCIENCE ; 224 ; 336-340

Publication date:

2004-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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