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    Stoichiometry control and point defects in compound semiconductors

    New search for: Nishizawa, J. i.

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    Stoichiometry control and point defects in compound semiconductors

    New search for: Nishizawa, J. i.

    Access

    Access via TIB
    Check availability in my library
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    Stoichiometry control and point defects in compound semiconductors

    New search for: Nishizawa, J. i.

    Access

    Access via TIB
    Check availability in my library
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    Document information
    Title:

    Stoichiometry control and point defects in compound semiconductors

    Contributors:

    Nishizawa, J. i. (author)

    Published in:

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 6 ; 249-252

    Publication date:

    2003-01-01

    Size:

    4 pages

    ISSN:

    1369-8001

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.38152

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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