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    Atomic-Scale Studies of Point Defects in Compound Semiconductors by Scanning Tunneling Microscopy

    New search for: Gwo, S.
    New search for: Miwa, S.
    New search for: Ohno, H.
    New search for: Fan, J.-F.
    New search for: Tokumoto, H.

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    Atomic-Scale Studies of Point Defects in Compound Semiconductors by Scanning Tunneling Microscopy

    New search for: Gwo, S.
    New search for: Miwa, S.
    New search for: Ohno, H.
    New search for: Fan, J.-F.
    New search for: Tokumoto, H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Atomic-Scale Studies of Point Defects in Compound Semiconductors by Scanning Tunneling Microscopy

    New search for: Gwo, S.
    New search for: Miwa, S.
    New search for: Ohno, H.
    New search for: Fan, J.-F.
    New search for: Tokumoto, H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Atomic-Scale Studies of Point Defects in Compound Semiconductors by Scanning Tunneling Microscopy

    Contributors:

    Gwo, S. (author) / Miwa, S. (author) / Ohno, H. (author) / Fan, J.-F. (author) / Tokumoto, H. (author)

    Published in:

    MATERIALS SCIENCE FORUM ; 1949-1954

    Publication date:

    1995-01-01

    Size:

    6 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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