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    Isochronal annealing study of hydrogen interaction with implantation-induced point defects in p-type silicon

    New search for: Tokuda, Y.
    New search for: Sato, H.

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    Isochronal annealing study of hydrogen interaction with implantation-induced point defects in p-type silicon

    New search for: Tokuda, Y.
    New search for: Sato, H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Isochronal annealing study of hydrogen interaction with implantation-induced point defects in p-type silicon

    New search for: Tokuda, Y.
    New search for: Sato, H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
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    Document information
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    Document information
    Title:

    Isochronal annealing study of hydrogen interaction with implantation-induced point defects in p-type silicon

    Contributors:

    Tokuda, Y. (author) / Sato, H. (author)

    Published in:

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 6 ; 277-279

    Publication date:

    2003-01-01

    Size:

    3 pages

    ISSN:

    1369-8001

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.38152

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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