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    Effect of surface stoichiometry on Be doping in GaAs by intermittent supply of AsH3 and TEG in an ultra-high vacuum

    New search for: Ohno, T.
    New search for: Oyama, Y.
    New search for: Suto, K.
    New search for: Nishizawa, J. i.

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    Effect of surface stoichiometry on Be doping in GaAs by intermittent supply of AsH3 and TEG in an ultra-high vacuum

    New search for: Ohno, T.
    New search for: Oyama, Y.
    New search for: Suto, K.
    New search for: Nishizawa, J. i.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Effect of surface stoichiometry on Be doping in GaAs by intermittent supply of AsH3 and TEG in an ultra-high vacuum

    New search for: Ohno, T.
    New search for: Oyama, Y.
    New search for: Suto, K.
    New search for: Nishizawa, J. i.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Check availability in my library
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    Document information
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    Document information
    Title:

    Effect of surface stoichiometry on Be doping in GaAs by intermittent supply of AsH3 and TEG in an ultra-high vacuum

    Contributors:

    Ohno, T. (author) / Oyama, Y. (author) / Suto, K. (author) / Nishizawa, J. i. (author)

    Published in:

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 6 ; 421-424

    Publication date:

    2003-01-01

    Size:

    4 pages

    ISSN:

    1369-8001

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.38152

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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