Effect of surface stoichiometry on Be doping in GaAs by intermittent supply of AsH3 and TEG in an ultra-high vacuum: Fid-Bau Portal

Effect of surface stoichiometry on Be doping in GaAs by intermittent supply of AsH3 and TEG in an ultra-high vacuum

Ohno, T. / Oyama, Y. / Suto, K. / Nishizawa, J. i.

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Effect of surface stoichiometry on Be doping in GaAs by intermittent supply of AsH3 and TEG in an ultra-high vacuum

Ohno, T. / Oyama, Y. / Suto, K. / Nishizawa, J. i.

Effect of surface stoichiometry on Be doping in GaAs by intermittent supply of AsH3 and TEG in an ultra-high vacuum

Ohno, T. / Oyama, Y. / Suto, K. / Nishizawa, J. i.

Zugriff

Zugriff über TIB

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Bestellung bei Subito €

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Dokumentinformationen

Titel:

Effect of surface stoichiometry on Be doping in GaAs by intermittent supply of AsH3 and TEG in an ultra-high vacuum

Beteiligte:

Ohno, T. (Autor:in) / Oyama, Y. (Autor:in) / Suto, K. (Autor:in) / Nishizawa, J. i. (Autor:in)

Erschienen in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 6 ; 421-424

Erscheinungsdatum:

01.01.2003

Format / Umfang:

4 pages

ISSN:

1369-8001

Medientyp:

Aufsatz (Zeitschrift)

Format:

Sprache:

Englisch

Klassifikation:

DDC: 621.38152

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