Phase separation in Ga-doped MgZnO layers grown by plasma-assisted molecular-beam epitaxy: Fid-Bau Portal

Phase separation in Ga-doped MgZnO layers grown by plasma-assisted molecular-beam epitaxy

Harada, C. / Ko, H. J. / Makino, H. / Yao, T.

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Phase separation in Ga-doped MgZnO layers grown by plasma-assisted molecular-beam epitaxy

Harada, C. / Ko, H. J. / Makino, H. / Yao, T.

Phase separation in Ga-doped MgZnO layers grown by plasma-assisted molecular-beam epitaxy

Harada, C. / Ko, H. J. / Makino, H. / Yao, T.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Phase separation in Ga-doped MgZnO layers grown by plasma-assisted molecular-beam epitaxy

Contributors:

Harada, C. (author) / Ko, H. J. (author) / Makino, H. (author) / Yao, T. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 6 ; 539-541

Publication date:

2003-01-01

Size:

3 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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