Effect of MgO buffer layer thickness on the electrical properties of MgZnO thin film transistors fabricated by plasma assisted molecular beam epitaxy: Fid-Bau Portal

Effect of MgO buffer layer thickness on the electrical properties of MgZnO thin film transistors fabricated by plasma assisted molecular beam epitaxy

Huang, H. Q. / Liu, F. J. / Sun, J. / Zhao, J. W. / Hu, Z. F. / Li, Z. J. / Zhang, X. Q. / Wang, Y. S.

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Effect of MgO buffer layer thickness on the electrical properties of MgZnO thin film transistors fabricated by plasma assisted molecular beam epitaxy

Huang, H. Q. / Liu, F. J. / Sun, J. / Zhao, J. W. / Hu, Z. F. / Li, Z. J. / Zhang, X. Q. / Wang, Y. S.

Effect of MgO buffer layer thickness on the electrical properties of MgZnO thin film transistors fabricated by plasma assisted molecular beam epitaxy

Huang, H. Q. / Liu, F. J. / Sun, J. / Zhao, J. W. / Hu, Z. F. / Li, Z. J. / Zhang, X. Q. / Wang, Y. S.

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Title:

Effect of MgO buffer layer thickness on the electrical properties of MgZnO thin film transistors fabricated by plasma assisted molecular beam epitaxy

Contributors:

Huang, H. Q. (author) / Liu, F. J. (author) / Sun, J. (author) / Zhao, J. W. (author) / Hu, Z. F. (author) / Li, Z. J. (author) / Zhang, X. Q. (author) / Wang, Y. S. (author)

Published in:

APPLIED SURFACE SCIENCE ; 257 ; 10721-10724

Publication date:

2011-01-01

Size:

4 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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