A platform for research: civil engineering, architecture and urbanism
Low-Temperature Growth of Well-Aligned beta-Ga~2O~3 Nanowires from a Single-Source Organometallic Precursor
Low-Temperature Growth of Well-Aligned beta-Ga~2O~3 Nanowires from a Single-Source Organometallic Precursor
Low-Temperature Growth of Well-Aligned beta-Ga~2O~3 Nanowires from a Single-Source Organometallic Precursor
Chang, K.-W. (author) / Wu, J.-J. (author)
ADVANCED MATERIALS -DEERFIELD BEACH THEN WEINHEIM- ; 16 ; 545 - 549
2004-01-01
5 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Oriented Growth of Well-Aligned ZNO Nanowires by Polymer Self-Assembling
British Library Online Contents | 2005
|Very narrow In2S3 nanorods and nanowires from a single source precursor
British Library Online Contents | 2013
|Growth and Characterization of Well-Aligned nc-Si/SiO~x Composite Nanowires
British Library Online Contents | 2002
|British Library Online Contents | 2012
|High-Temperature Self-Assembly of Peptides into Vertically Well-Aligned Nanowires by Aniline Vapor
British Library Online Contents | 2008
|