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Nitride-based HFETs with carrier confinement layers

Su, Y. K. / Chang, S. J. / Kuan, T. M. / Ko, C. H. / Webb, J. B. / Lan, W. H. / Cherng, Y. T. / Chen, S. C.

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Nitride-based HFETs with carrier confinement layers

Su, Y. K. / Chang, S. J. / Kuan, T. M. / Ko, C. H. / Webb, J. B. / Lan, W. H. / Cherng, Y. T. / Chen, S. C.

Nitride-based HFETs with carrier confinement layers

Su, Y. K. / Chang, S. J. / Kuan, T. M. / Ko, C. H. / Webb, J. B. / Lan, W. H. / Cherng, Y. T. / Chen, S. C.

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Title:

Nitride-based HFETs with carrier confinement layers

Contributors:

Su, Y. K. (author) / Chang, S. J. (author) / Kuan, T. M. (author) / Ko, C. H. (author) / Webb, J. B. (author) / Lan, W. H. (author) / Cherng, Y. T. (author) / Chen, S. C. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 110 ; 172-176

Publication date:

2004-01-01

Size:

5 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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