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Nitride-based HFETs with carrier confinement layers
Nitride-based HFETs with carrier confinement layers
Nitride-based HFETs with carrier confinement layers
Su, Y. K. (Autor:in) / Chang, S. J. (Autor:in) / Kuan, T. M. (Autor:in) / Ko, C. H. (Autor:in) / Webb, J. B. (Autor:in) / Lan, W. H. (Autor:in) / Cherng, Y. T. (Autor:in) / Chen, S. C. (Autor:in)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 110 ; 172-176
01.01.2004
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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