1,530V, 17.5mOmega cm^2 Normally-Off 4H-SiC VJFET Design, Fabrication and Characterization: Fid-Bau Portal

1,530V, 17.5mOmega cm^2 Normally-Off 4H-SiC VJFET Design, Fabrication and Characterization

Fursin, L. / Li, X. / Zhao, J. H.

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1,530V, 17.5mOmega cm^2 Normally-Off 4H-SiC VJFET Design, Fabrication and Characterization

Fursin, L. / Li, X. / Zhao, J. H.

1,530V, 17.5mOmega cm^2 Normally-Off 4H-SiC VJFET Design, Fabrication and Characterization

Fursin, L. / Li, X. / Zhao, J. H.

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Order at Subito €

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Document information

Title:

1,530V, 17.5mOmega cm^2 Normally-Off 4H-SiC VJFET Design, Fabrication and Characterization

Contributors:

Fursin, L. (author) / Li, X. (author) / Zhao, J. H. (author)

Published in:

MATERIALS SCIENCE FORUM ; 457/460 ; 1157-1160

Publication date:

2004-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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