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Design of 1.7 to 14 kV Normally-Off Trenched and Implanted Vertical JFET in 4H-SiC
Design of 1.7 to 14 kV Normally-Off Trenched and Implanted Vertical JFET in 4H-SiC
Design of 1.7 to 14 kV Normally-Off Trenched and Implanted Vertical JFET in 4H-SiC
Li, X. (author) / Zhao, J. H. (author)
MATERIALS SCIENCE FORUM ; 457/460 ; 1197-1200
2004-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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