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6A, 1kV 4H-SiC Normally-Off Trenched-and-Implanted Vertical JFETs
6A, 1kV 4H-SiC Normally-Off Trenched-and-Implanted Vertical JFETs
6A, 1kV 4H-SiC Normally-Off Trenched-and-Implanted Vertical JFETs
Zhao, J. H. (author) / Tone, K. (author) / Li, X. (author) / Alexandrov, P. (author) / Fursin, L. (author) / Weiner, M. (author)
MATERIALS SCIENCE FORUM ; 457/460 ; 1213-1216
2004-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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