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DC and RF Performance of Insulating Gate 4H-SiC Depletion Mode Field Effect Transistors
DC and RF Performance of Insulating Gate 4H-SiC Depletion Mode Field Effect Transistors
DC and RF Performance of Insulating Gate 4H-SiC Depletion Mode Field Effect Transistors
Jonsson, R. (author) / Wahab, Q. (author) / Rudner, S. (author)
MATERIALS SCIENCE FORUM ; 457/460 ; 1225-1228
2004-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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