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DC and RF Performance of Insulating Gate 4H-SiC Depletion Mode Field Effect Transistors
DC and RF Performance of Insulating Gate 4H-SiC Depletion Mode Field Effect Transistors
DC and RF Performance of Insulating Gate 4H-SiC Depletion Mode Field Effect Transistors
Jonsson, R. (Autor:in) / Wahab, Q. (Autor:in) / Rudner, S. (Autor:in)
MATERIALS SCIENCE FORUM ; 457/460 ; 1225-1228
01.01.2004
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
620.11
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