A platform for research: civil engineering, architecture and urbanism
A Highly Effective Edge Termination Design for SiC Planar High Power Devices
A Highly Effective Edge Termination Design for SiC Planar High Power Devices
A Highly Effective Edge Termination Design for SiC Planar High Power Devices
Perez, R. (author) / Mestres, N. (author) / Blanque, S. (author) / Tournier, D. (author) / Jorda, X. (author) / Godignon, P. (author) / Nipoti, R. (author)
MATERIALS SCIENCE FORUM ; 457/460 ; 1253-1256
2004-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Effective Edge Termination Design in SiC VJFET
British Library Online Contents | 2005
|Edge Termination Technique for SiC Power Devices
British Library Online Contents | 2004
|British Library Online Contents | 2002
|Novel Buried Field Rings Edge Termination for 4H-SiC High-Voltage Devices
British Library Online Contents | 2003
|Grayscale Junction Termination for High-Voltage SiC Devices
British Library Online Contents | 2009
|