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Novel Buried Field Rings Edge Termination for 4H-SiC High-Voltage Devices
Novel Buried Field Rings Edge Termination for 4H-SiC High-Voltage Devices
Novel Buried Field Rings Edge Termination for 4H-SiC High-Voltage Devices
Mihaila, A. (author) / Udrea, F. (author) / Godignon, P. (author) / Trajkovic, T. (author) / Brezeanu, G. (author) / Rebollo, J. (author) / Millan, J. (author) / Bergman, P. / Janzen, E.
2003-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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