Initial Stages of Thermal Oxidation of 4H-SiC (1120) Studied by Photoelectron Spectroscopy: Fid-Bau Portal

Initial Stages of Thermal Oxidation of 4H-SiC (1120) Studied by Photoelectron Spectroscopy

Seyller, T. / Emtsev, K. V. / Graupner, R. / Ley, L.

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Initial Stages of Thermal Oxidation of 4H-SiC (1120) Studied by Photoelectron Spectroscopy

Seyller, T. / Emtsev, K. V. / Graupner, R. / Ley, L.

Initial Stages of Thermal Oxidation of 4H-SiC (1120) Studied by Photoelectron Spectroscopy

Seyller, T. / Emtsev, K. V. / Graupner, R. / Ley, L.

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Check availability in my library

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Document information

Title:

Initial Stages of Thermal Oxidation of 4H-SiC (1120) Studied by Photoelectron Spectroscopy

Contributors:

Seyller, T. (author) / Emtsev, K. V. (author) / Graupner, R. (author) / Ley, L. (author)

Published in:

MATERIALS SCIENCE FORUM ; 457/460 ; 1317-1320

Publication date:

2004-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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