A platform for research: civil engineering, architecture and urbanism
Structural and Electronic Properties of the 6H-SiC(0001)/Al~2O~3 Interface Prepared by Atomic Layer Deposition
Structural and Electronic Properties of the 6H-SiC(0001)/Al~2O~3 Interface Prepared by Atomic Layer Deposition
Structural and Electronic Properties of the 6H-SiC(0001)/Al~2O~3 Interface Prepared by Atomic Layer Deposition
Seyller, T. (author) / Gao, K. (author) / Ley, L. (author) / Ciobanu, F. (author) / Pensl, G. (author) / Tadich, A. (author) / Riley, J. D. (author) / Leckey, R. C. G. (author)
MATERIALS SCIENCE FORUM ; 457/460 ; 1369-1372
2004-01-01
4 pages
Article (Journal)
English
DDC:
620.11
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Atomic structure and electronic properties of the GaN/ZnO (0001) interface
British Library Online Contents | 2005
|Pd/GaN(0001) interface properties
British Library Online Contents | 2014
|Ab Initio Study of the Structural and Electronic Properties of the Graphene/SiC{0001} Interface
British Library Online Contents | 2007
|British Library Online Contents | 2015
|Hafnium silicon oxide films prepared by atomic layer deposition
British Library Online Contents | 2004
|