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Properties of the 3.4 eV Luminescence Band in GaN and its Relation to Stacking Faults
Properties of the 3.4 eV Luminescence Band in GaN and its Relation to Stacking Faults
Properties of the 3.4 eV Luminescence Band in GaN and its Relation to Stacking Faults
Skromme, B. J. (author) / Chen, L. (author) / Mikhov, M. K. (author) / Yamane, H. (author) / Aoki, M. (author) / DiSalvo, F. J. (author)
MATERIALS SCIENCE FORUM ; 457/460 ; 1613-1616
2004-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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