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    Micro-Raman Characterization of 4H-SiC Stacking Faults

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    Micro-Raman Characterization of 4H-SiC Stacking Faults

    New search for: Piluso, N.
    New search for: Camarda, M.
    New search for: Anzalone, R.
    New search for: La Via, F.
    New search for: Okumura, H.
    New search for: Harima, H.
    New search for: Kimoto, T.
    New search for: Yoshimoto, M.
    New search for: Watanabe, H.
    New search for: Hatayama, T.
    New search for: Matsuura, H.
    New search for: Funaki, T.
    New search for: Sano, Y.

    Access

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    Micro-Raman Characterization of 4H-SiC Stacking Faults

    New search for: Piluso, N.
    New search for: Camarda, M.
    New search for: Anzalone, R.
    New search for: La Via, F.
    New search for: Okumura, H.
    New search for: Harima, H.
    New search for: Kimoto, T.
    New search for: Yoshimoto, M.
    New search for: Watanabe, H.
    New search for: Hatayama, T.
    New search for: Matsuura, H.
    New search for: Funaki, T.
    New search for: Sano, Y.

    Access

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    Document information
    Title:

    Micro-Raman Characterization of 4H-SiC Stacking Faults

    Contributors:

    Piluso, N. (author) / Camarda, M. (author) / Anzalone, R. (author) / La Via, F. (author) / Okumura, H. / Harima, H. / Kimoto, T. / Yoshimoto, M. / Watanabe, H. / Hatayama, T.

    Published in:

    Silicon Carbide and Related Materials 2013 PART 1 Selected, peer reviewed papers from the 15^t^h International Conference on Silicon Carbide and Related Materials, (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan ; 378-381

    MATERIALS SCIENCE FORUM ; 778/780

    Publication date:

    2014-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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