Properties and Suitability of 4H-SiC Epitaxial Layers Grown at Different CVD Systems for High Voltage Applications: Fid-Bau Portal

Properties and Suitability of 4H-SiC Epitaxial Layers Grown at Different CVD Systems for High Voltage Applications

Thomas, B. / Bartsch, W. / Stein, R. / Schorner, R. / Stephani, D.

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Properties and Suitability of 4H-SiC Epitaxial Layers Grown at Different CVD Systems for High Voltage Applications

Thomas, B. / Bartsch, W. / Stein, R. / Schorner, R. / Stephani, D.

Properties and Suitability of 4H-SiC Epitaxial Layers Grown at Different CVD Systems for High Voltage Applications

Thomas, B. / Bartsch, W. / Stein, R. / Schorner, R. / Stephani, D.

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Check availability in my library

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Document information

Title:

Properties and Suitability of 4H-SiC Epitaxial Layers Grown at Different CVD Systems for High Voltage Applications

Contributors:

Thomas, B. (author) / Bartsch, W. (author) / Stein, R. (author) / Schorner, R. (author) / Stephani, D. (author)

Published in:

MATERIALS SCIENCE FORUM ; 457/460 ; 181-184

Publication date:

2004-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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