Electrical Characterization of High-Voltage 4H-SiC Diodes on High-Temperature CVD-Grown Epitaxial Layers: Fid-Bau Portal

Electrical Characterization of High-Voltage 4H-SiC Diodes on High-Temperature CVD-Grown Epitaxial Layers

Zimmermann, U. / Osterman, J. / Zhang, J. / Henry, A. / Hallen, A.

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Electrical Characterization of High-Voltage 4H-SiC Diodes on High-Temperature CVD-Grown Epitaxial Layers

Zimmermann, U. / Osterman, J. / Zhang, J. / Henry, A. / Hallen, A.

Electrical Characterization of High-Voltage 4H-SiC Diodes on High-Temperature CVD-Grown Epitaxial Layers

Zimmermann, U. / Osterman, J. / Zhang, J. / Henry, A. / Hallen, A.

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Check availability in my library

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Document information

Title:

Electrical Characterization of High-Voltage 4H-SiC Diodes on High-Temperature CVD-Grown Epitaxial Layers

Contributors:

Zimmermann, U. (author) / Osterman, J. (author) / Zhang, J. (author) / Henry, A. (author) / Hallen, A. (author)

Published in:

MATERIALS SCIENCE FORUM ; 389/393 ; 1285-1288

Publication date:

2002-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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