Optically Induced Transitions among Point Defects in High Purity and Vanadium-Doped Semi-Insulating 4H SiC: Fid-Bau Portal

Optically Induced Transitions among Point Defects in High Purity and Vanadium-Doped Semi-Insulating 4H SiC

Zvanut, M. E. / Konovalov, V. V. / Mitchel, W. C. / Mitchell, W. D.

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Optically Induced Transitions among Point Defects in High Purity and Vanadium-Doped Semi-Insulating 4H SiC

Zvanut, M. E. / Konovalov, V. V. / Mitchel, W. C. / Mitchell, W. D.

Optically Induced Transitions among Point Defects in High Purity and Vanadium-Doped Semi-Insulating 4H SiC

Zvanut, M. E. / Konovalov, V. V. / Mitchel, W. C. / Mitchell, W. D.

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Document information

Title:

Optically Induced Transitions among Point Defects in High Purity and Vanadium-Doped Semi-Insulating 4H SiC

Contributors:

Zvanut, M. E. (author) / Konovalov, V. V. (author) / Mitchel, W. C. (author) / Mitchell, W. D. (author)

Published in:

MATERIALS SCIENCE FORUM ; 457/460 ; 489-492

Publication date:

2004-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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