Effects of dislocations on the luminescence of GaN/InGaN multi-quantum-well light-emitting-diode layers: Fid-Bau Portal

Effects of dislocations on the luminescence of GaN/InGaN multi-quantum-well light-emitting-diode layers

Choi, Y. S. / Park, J. H. / Kim, S. S. / Song, H. J. / Lee, S. H. / Jung, J. J. / Lee, B. T.

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Effects of dislocations on the luminescence of GaN/InGaN multi-quantum-well light-emitting-diode layers

Choi, Y. S. / Park, J. H. / Kim, S. S. / Song, H. J. / Lee, S. H. / Jung, J. J. / Lee, B. T.

Effects of dislocations on the luminescence of GaN/InGaN multi-quantum-well light-emitting-diode layers

Choi, Y. S. / Park, J. H. / Kim, S. S. / Song, H. J. / Lee, S. H. / Jung, J. J. / Lee, B. T.

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Title:

Effects of dislocations on the luminescence of GaN/InGaN multi-quantum-well light-emitting-diode layers

Contributors:

Choi, Y. S. (author) / Park, J. H. (author) / Kim, S. S. (author) / Song, H. J. (author) / Lee, S. H. (author) / Jung, J. J. (author) / Lee, B. T. (author)

Published in:

MATERIALS LETTERS ; 58 ; 2614-2617

Publication date:

2004-01-01

Size:

4 pages

ISSN:

0167-577X

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.1105 / 530

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