Growth kinetics of reaction layers formed during diffusion bonding of SiC ceramic to TiAl alloy: Fid-Bau Portal

Growth kinetics of reaction layers formed during diffusion bonding of SiC ceramic to TiAl alloy

Liu, H. J. / Feng, J. C. / Fujii, H. / Nogi, K.

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Growth kinetics of reaction layers formed during diffusion bonding of SiC ceramic to TiAl alloy

Liu, H. J. / Feng, J. C. / Fujii, H. / Nogi, K.

Growth kinetics of reaction layers formed during diffusion bonding of SiC ceramic to TiAl alloy

Liu, H. J. / Feng, J. C. / Fujii, H. / Nogi, K.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Growth kinetics of reaction layers formed during diffusion bonding of SiC ceramic to TiAl alloy

Contributors:

Liu, H. J. (author) / Feng, J. C. (author) / Fujii, H. (author) / Nogi, K. (author)

Published in:

MATERIALS SCIENCE AND TECHNOLOGY -LONDON- ; 20 ; 1069-1072

Publication date:

2004-01-01

Size:

4 pages

ISSN:

0267-0836

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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