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Computer simulation of current transport in GaN and AlGaN Schottky diodes based on thin surface barrier model
Computer simulation of current transport in GaN and AlGaN Schottky diodes based on thin surface barrier model
Computer simulation of current transport in GaN and AlGaN Schottky diodes based on thin surface barrier model
Kotani, J. (author) / Hasegawa, H. (author) / Hashizume, T. (author)
APPLIED SURFACE SCIENCE ; 237 ; 213-218
2004-01-01
6 pages
Article (Journal)
English
DDC:
621.35
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