High temperature current transport in gate oxides based (GaN)/AlGaN/GaN Schottky diodes: Fid-Bau Portal

High temperature current transport in gate oxides based (GaN)/AlGaN/GaN Schottky diodes

Osvald, J. / Lalinský, T. / Vanko, G.

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High temperature current transport in gate oxides based (GaN)/AlGaN/GaN Schottky diodes

Osvald, J. / Lalinský, T. / Vanko, G.

High temperature current transport in gate oxides based (GaN)/AlGaN/GaN Schottky diodes

Osvald, J. / Lalinský, T. / Vanko, G.

Access

Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

High temperature current transport in gate oxides based (GaN)/AlGaN/GaN Schottky diodes

Contributors:

Osvald, J. (author) / Lalinský, T. (author) / Vanko, G. (author)

Published in:

Applied surface science ; 461 ; 206-211

Publication date:

2018-01-01

Size:

6 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.44

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