Photoluminescence studies in highly Te-doped Ga1-xInxAsySb1-y epitaxial layers grown on GaSb by liquid phase epitaxy: Fid-Bau Portal

Photoluminescence studies in highly Te-doped Ga1-xInxAsySb1-y epitaxial layers grown on GaSb by liquid phase epitaxy

Diaz-Reyes, J. / Herrera-Perez, J. L. / Gomez-Herrera, M. L. / Cardona-Bedoya, J. A. / Mendoza-Alvarez, J. G.

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Photoluminescence studies in highly Te-doped Ga1-xInxAsySb1-y epitaxial layers grown on GaSb by liquid phase epitaxy

Diaz-Reyes, J. / Herrera-Perez, J. L. / Gomez-Herrera, M. L. / Cardona-Bedoya, J. A. / Mendoza-Alvarez, J. G.

Photoluminescence studies in highly Te-doped Ga1-xInxAsySb1-y epitaxial layers grown on GaSb by liquid phase epitaxy

Diaz-Reyes, J. / Herrera-Perez, J. L. / Gomez-Herrera, M. L. / Cardona-Bedoya, J. A. / Mendoza-Alvarez, J. G.

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Check availability in my library

Order at Subito €

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Title:

Photoluminescence studies in highly Te-doped Ga1-xInxAsySb1-y epitaxial layers grown on GaSb by liquid phase epitaxy

Contributors:

Diaz-Reyes, J. (author) / Herrera-Perez, J. L. (author) / Gomez-Herrera, M. L. (author) / Cardona-Bedoya, J. A. (author) / Mendoza-Alvarez, J. G. (author)

Published in:

APPLIED SURFACE SCIENCE ; 238 ; 400-404

Publication date:

2004-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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