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Arsenic diffusion in Si and strained SixGe1-x alloys at 1000 degreeC
Arsenic diffusion in Si and strained SixGe1-x alloys at 1000 degreeC
Arsenic diffusion in Si and strained SixGe1-x alloys at 1000 degreeC
Uppal, S. (author) / Bonar, J. M. (author) / Zhang, J. (author) / Willoughby, A. F. (author)
MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 114/115 ; 349-351
2004-01-01
3 pages
Article (Journal)
English
DDC:
620.11
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