Arsenic diffusion in Si and strained SixGe1-x alloys at 1000 degreeC: Fid-Bau Portal

Arsenic diffusion in Si and strained SixGe1-x alloys at 1000 degreeC

Uppal, S. / Bonar, J. M. / Zhang, J. / Willoughby, A. F.

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Arsenic diffusion in Si and strained SixGe1-x alloys at 1000 degreeC

Uppal, S. / Bonar, J. M. / Zhang, J. / Willoughby, A. F.

Arsenic diffusion in Si and strained SixGe1-x alloys at 1000 degreeC

Uppal, S. / Bonar, J. M. / Zhang, J. / Willoughby, A. F.

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Check availability in my library

Order at Subito €

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Document information

Title:

Arsenic diffusion in Si and strained SixGe1-x alloys at 1000 degreeC

Contributors:

Uppal, S. (author) / Bonar, J. M. (author) / Zhang, J. (author) / Willoughby, A. F. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B -LAUSANNE- ; 114/115 ; 349-351

Publication date:

2004-01-01

Size:

3 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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