Homogeneity of Ge~1~-~xSi~x alloys (x<or=0.30) grown by the travelling solvent method: Fid-Bau Portal

Homogeneity of Ge~1~-~xSi~x alloys (x

Labrie, D. / George, A. E. / Jamieson, M. / Obruchkov, S. / Healey, J. P. / Paton, B. E. / Saghir, M. Z.

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Homogeneity of Ge~1~-~xSi~x alloys (x

Labrie, D. / George, A. E. / Jamieson, M. / Obruchkov, S. / Healey, J. P. / Paton, B. E. / Saghir, M. Z.

Homogeneity of Ge~1~-~xSi~x alloys (x

Labrie, D. / George, A. E. / Jamieson, M. / Obruchkov, S. / Healey, J. P. / Paton, B. E. / Saghir, M. Z.

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Check availability in my library

Order at Subito €

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Title:

Homogeneity of Ge~1~-~xSi~x alloys (x

Contributors:

Labrie, D. (author) / George, A. E. (author) / Jamieson, M. (author) / Obruchkov, S. (author) / Healey, J. P. (author) / Paton, B. E. (author) / Saghir, M. Z. (author) / Dost, S.

Published in:

SPECIAL ISSUE: CRYSTAL GROWTH OF SEMICONDUCTORS FROM THE LIQUID PHASE ; 105-121

INTERNATIONAL JOURNAL OF MATERIALS AND PRODUCT TECHNOLOGY ; 22

Publication date:

2005-01-01

Size:

17 pages

ISSN:

0268-1900

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

Labrie, D. / George, A.E. / Jamieson, M. et al. | British Library Online Contents | 2005

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