The Structural and Photoluminescence Character of InAs Quantum Dots Grown on a Combined InAlAs and GaAs Strained Buffer Layer: Fid-Bau Portal

The Structural and Photoluminescence Character of InAs Quantum Dots Grown on a Combined InAlAs and GaAs Strained Buffer Layer

Shi, G. X. / Xu, B. / Jin, P. / Ye, X. L. / Cui, C. X. / Zhang, C. L. / Wu, J. / Wang, Z. G.

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The Structural and Photoluminescence Character of InAs Quantum Dots Grown on a Combined InAlAs and GaAs Strained Buffer Layer

Shi, G. X. / Xu, B. / Jin, P. / Ye, X. L. / Cui, C. X. / Zhang, C. L. / Wu, J. / Wang, Z. G.

The Structural and Photoluminescence Character of InAs Quantum Dots Grown on a Combined InAlAs and GaAs Strained Buffer Layer

Shi, G. X. / Xu, B. / Jin, P. / Ye, X. L. / Cui, C. X. / Zhang, C. L. / Wu, J. / Wang, Z. G.

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Title:

The Structural and Photoluminescence Character of InAs Quantum Dots Grown on a Combined InAlAs and GaAs Strained Buffer Layer

Contributors:

Shi, G. X. (author) / Xu, B. (author) / Jin, P. (author) / Ye, X. L. (author) / Cui, C. X. (author) / Zhang, C. L. (author) / Wu, J. (author) / Wang, Z. G. (author)

Published in:

MATERIALS SCIENCE FORUM ; 475/479 ; 1791-1794

Publication date:

2005-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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