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Germanium nanoislands formation on silicon oxide surface by molecular beam epitaxy

Nikiforov, A. I. / Ulyanov, V. V. / Pchelyakov, O. P. / Teys, S. A. / Gutakovsky, A. K.

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Germanium nanoislands formation on silicon oxide surface by molecular beam epitaxy

Nikiforov, A. I. / Ulyanov, V. V. / Pchelyakov, O. P. / Teys, S. A. / Gutakovsky, A. K.

Germanium nanoislands formation on silicon oxide surface by molecular beam epitaxy

Nikiforov, A. I. / Ulyanov, V. V. / Pchelyakov, O. P. / Teys, S. A. / Gutakovsky, A. K.

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Document information

Title:

Germanium nanoislands formation on silicon oxide surface by molecular beam epitaxy

Contributors:

Nikiforov, A. I. (author) / Ulyanov, V. V. (author) / Pchelyakov, O. P. (author) / Teys, S. A. (author) / Gutakovsky, A. K. (author)

Published in:

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 8 ; 47-50

Publication date:

2005-01-01

Size:

4 pages

ISSN:

1369-8001

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.38152

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