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    Effect of annealing on interface state density of Ni-silicided/Si1-xGex Schottky diode

    New search for: Saha, A. R.
    New search for: Chattopadhyay, S.
    New search for: Dalapati, G. K.
    New search for: Bose, C.
    New search for: Maiti, C. K.

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    Effect of annealing on interface state density of Ni-silicided/Si1-xGex Schottky diode

    New search for: Saha, A. R.
    New search for: Chattopadhyay, S.
    New search for: Dalapati, G. K.
    New search for: Bose, C.
    New search for: Maiti, C. K.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Effect of annealing on interface state density of Ni-silicided/Si1-xGex Schottky diode

    New search for: Saha, A. R.
    New search for: Chattopadhyay, S.
    New search for: Dalapati, G. K.
    New search for: Bose, C.
    New search for: Maiti, C. K.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Document information
    Title:

    Effect of annealing on interface state density of Ni-silicided/Si1-xGex Schottky diode

    Contributors:

    Saha, A. R. (author) / Chattopadhyay, S. (author) / Dalapati, G. K. (author) / Bose, C. (author) / Maiti, C. K. (author)

    Published in:

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 8 ; 249-253

    Publication date:

    2005-01-01

    Size:

    5 pages

    ISSN:

    1369-8001

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.38152

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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