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Effect of annealing on interface state density of Ni-silicided/Si1-xGex Schottky diode
Effect of annealing on interface state density of Ni-silicided/Si1-xGex Schottky diode
Effect of annealing on interface state density of Ni-silicided/Si1-xGex Schottky diode
Saha, A. R. (Autor:in) / Chattopadhyay, S. (Autor:in) / Dalapati, G. K. (Autor:in) / Bose, C. (Autor:in) / Maiti, C. K. (Autor:in)
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 8 ; 249-253
01.01.2005
5 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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