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Midgap Levels in As-Grown 4H-SiC Epilayers Investigated by DLTS

Danno, K. / Kimoto, T. / Matsunami, H.

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Midgap Levels in As-Grown 4H-SiC Epilayers Investigated by DLTS

Danno, K. / Kimoto, T. / Matsunami, H.

Midgap Levels in As-Grown 4H-SiC Epilayers Investigated by DLTS

Danno, K. / Kimoto, T. / Matsunami, H.

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Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Midgap Levels in As-Grown 4H-SiC Epilayers Investigated by DLTS

Contributors:

Danno, K. (author) / Kimoto, T. (author) / Matsunami, H. (author) / Nipoti, R. / Poggi, A. / Scorzoni, A.

Published in:

Silicon Carbide and Related Materials 2004 ; 355-358

MATERIALS SCIENCE FORUM ; 483/485

Publication date:

2005-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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