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Electronic Levels Induced by Irradiation in 4H-Silicon Carbide

Castaldini, A. / Cavallini, A. / Rigutti, L. / Nava, F.

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Electronic Levels Induced by Irradiation in 4H-Silicon Carbide

Castaldini, A. / Cavallini, A. / Rigutti, L. / Nava, F.

Electronic Levels Induced by Irradiation in 4H-Silicon Carbide

Castaldini, A. / Cavallini, A. / Rigutti, L. / Nava, F.

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Access via TIB

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Order at Subito €

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Document information

Title:

Electronic Levels Induced by Irradiation in 4H-Silicon Carbide

Contributors:

Castaldini, A. (author) / Cavallini, A. (author) / Rigutti, L. (author) / Nava, F. (author) / Nipoti, R. / Poggi, A. / Scorzoni, A.

Published in:

Silicon Carbide and Related Materials 2004 ; 359-364

MATERIALS SCIENCE FORUM ; 483/485

Publication date:

2005-01-01

Size:

6 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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