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Effects of Dislocations on Reliability of Thermal Oxides Grown on n-Type 4H-SiC Wafer
Effects of Dislocations on Reliability of Thermal Oxides Grown on n-Type 4H-SiC Wafer
Effects of Dislocations on Reliability of Thermal Oxides Grown on n-Type 4H-SiC Wafer
Senzaki, J. (author) / Kojima, K. (author) / Kato, T. (author) / Shimozato, A. (author) / Fukuda, K. (author) / Nipoti, R. / Poggi, A. / Scorzoni, A.
2005-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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