Effect of POCl~3 Annealing on Reliability of Thermal Oxides Grown on 4H-SiC: Fid-Bau Portal

Effect of POCl~3 Annealing on Reliability of Thermal Oxides Grown on 4H-SiC

Morishita, R. / Yano, H. / Okamoto, D. / Hatayama, T. / Fuyuki, T.

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Effect of POCl~3 Annealing on Reliability of Thermal Oxides Grown on 4H-SiC

Morishita, R. / Yano, H. / Okamoto, D. / Hatayama, T. / Fuyuki, T.

Effect of POCl~3 Annealing on Reliability of Thermal Oxides Grown on 4H-SiC

Morishita, R. / Yano, H. / Okamoto, D. / Hatayama, T. / Fuyuki, T.

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Check availability in my library

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Document information

Title:

Effect of POCl~3 Annealing on Reliability of Thermal Oxides Grown on 4H-SiC

Contributors:

Morishita, R. (author) / Yano, H. (author) / Okamoto, D. (author) / Hatayama, T. (author) / Fuyuki, T. (author)

Published in:

MATERIALS SCIENCE FORUM ; 717/720 ; 739-742

Publication date:

2012-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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