Characterization of Polyimide Dielectric Layer for the Passivation of High Electric Field and High Temperature Silicon Carbide Power Devices: Fid-Bau Portal

Characterization of Polyimide Dielectric Layer for the Passivation of High Electric Field and High Temperature Silicon Carbide Power Devices

Zelmat, S. / Locatelli, M. L. / Lebey, T.

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Characterization of Polyimide Dielectric Layer for the Passivation of High Electric Field and High Temperature Silicon Carbide Power Devices

Zelmat, S. / Locatelli, M. L. / Lebey, T.

Characterization of Polyimide Dielectric Layer for the Passivation of High Electric Field and High Temperature Silicon Carbide Power Devices

Zelmat, S. / Locatelli, M. L. / Lebey, T.

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Check availability in my library

Order at Subito €

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Document information

Title:

Characterization of Polyimide Dielectric Layer for the Passivation of High Electric Field and High Temperature Silicon Carbide Power Devices

Contributors:

Zelmat, S. (author) / Locatelli, M. L. (author) / Lebey, T. (author) / Nipoti, R. / Poggi, A. / Scorzoni, A.

Published in:

Silicon Carbide and Related Materials 2004 ; 717-720

MATERIALS SCIENCE FORUM ; 483/485

Publication date:

2005-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

Diaham, S. / Locatelli, M. / Lebey, T. | British Library Online Contents | 2007

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Silicon Carbide High Frequency Devices

Weitzel, C. E. | British Library Online Contents | 1998

Atomic-Scale Passivation of Silicon Carbide Surfaces

Soukiassian, P. | British Library Online Contents | 2002

Interface Passivation for Silicon Dioxide Layers on Silicon Carbide

Dhar, S. / Wang, S. / Williams, J. R. et al. | British Library Online Contents | 2005